Influence of the crystalline quality of epitaxial layers on inversion channel mobility in 4H-SiC MOSFETs

被引：2

作者：

Kojima, K ^{[1
]}

Ohno, T

Suzuki, S

Senzaki, J

Harada, S

Fukuda, K

Kushibe, M

Masahara, K

Ishida, Y

Takahashi, T

Suzuki, T

Tanaka, T

Yoshida, S

Arai, K

机构：

[1] Ultra Low Less Power Device Technol Res Body, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, AIST, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] AIST, R&D Assoc, Adv Power Device Lab, FED, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

4H-SiC; crystal quality; epitaxial layers; inversion channel mobility; MOSFETs;

D O I：

10.4028/www.scientific.net/MSF.389-393.1053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relationship between the inversion channel mobility of 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) and crystalline qualities of epitaxial layer has been investigated. The channel mobility of 14.6 cm(2)/Vs was obtained from the 4H-SiC MOSFETs fabricated on the epitaxial layer with the doping concentration of 1.8 x 10(15)cm(-3) when the gate oxidation was performed by dry thermal process. It was found that the channel mobility has a correlation with doping concentration, surface roughness and crystalline qualities examined by full width at half maximum (FWHM) of x-ray rocking curve and photoluminescence intensity of near band gap emission.

引用

页码：1053 / 1056

页数：4

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