Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

被引：2
|
作者：
Gurfinkel, M. [1 ,2 ,3 ]
Kim, Jinwoo [2 ,3 ]
Potbhare, S. [2 ]
Xiong, H. D. [3 ]
Cheung, K. P. [3 ]
Suehle, J. [3 ]
Bernstein, J. B. [2 ]
Shapira, Yoram [1 ]
Lelis, A. J. [4 ]
Habersat, D. [4 ]
Goldsman, N. [2 ]
机构：
[1] Tel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel
[2] Univ Maryland, College Pk, MD 20742 USA
[3] Natl Inst Stand & Technol, Semicond Elect Div, Gaithersburg, MD 20899 USA
[4] US Army Res Lab, Adelphi, MD 20783 USA
来源：
2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT | 2007年
关键词：
D O I：
10.1109/IRWS.2007.4469233
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：111 / 113
页数：3
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