Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation

被引：3

作者：

Sogoyan A.V. ^{[1
,2
]}

Davydov G.G. ^{[1
,2
]}

机构：

[1] National Research Nuclear University MEPhI, Moscow 125080

[2] OAO ENPO Specialized Electronic Systems, Moscow 115409

来源：

Russian Microelectronics | 2011年 / 40卷 / 03期

关键词：

Leakage Current; Supply Voltage; Sapphire Substrate; RUSSIAN Microelectronics; Current Consumption;

D O I：

10.1134/S1063739711030085

中图分类号：

学科分类号：

摘要：

Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al2O3 system has on the field strength, temperature, intensity, and type of ionizing radiation is suggested. The influence of the two-dimensional character of processes on the charge formation in the SOS MOS devices is investigated. © 2011 Pleiades Publishing, Ltd.

引用

页码：194 / 208

页数：14

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