Nanostructure of silicon-carbon composite thin films obtained using magnetron sputtering technique

被引:0
|
作者
Kupriyanov L.Y. [1 ]
Roginskaya Y.E. [1 ]
Kozlova N.V. [1 ]
Politova E.D. [1 ]
Kal'nov V.A. [2 ]
Zhikharev E.N. [2 ]
机构
[1] Karpov Scientific-Research Physicochemical Institute, Moscow 105064
[2] Yoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021
来源
Nanotechnologies in Russia | 2011年 / 6卷 / 9-10期
关键词
Silicon Carbide; Composite Film; Magnetron Sputtering; Amorphous Silicon; Carbon Layer;
D O I
10.1134/S1995078011050090
中图分类号
学科分类号
摘要
Nanocomposite silicon-carbon thin films have been obtained using the layer-by-layer magnetron sputtering technique. The film thickness amounts to 110-470 nm. They possess a layered nanostructure formed by silicon and carbon layers of 7-10 nm each. X-ray diffraction investigations have shown the presence of a silicon carbide crystalline phase formed at layer interfaces of the films. The mirror-reflection spectra in the range of 200-2500 nm contain a number of maxima which can be attributed to the absorption spectra of amorphous silicon, amorphous carbon, and disorderred silicon carbide. Peculiarities of the IR absorption spectra indicate that graphene phases of low dimensionality can be formed in the region of silicon- and carbon-layer junctions. It is suggested that the films under study can be considered a promising basis for the development of lithium-battery electrodes with improved characteristics. © 2011 Pleiades Publishing, Ltd.
引用
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页码:633 / 638
页数:5
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