Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser

被引：0
|
作者：
J. Genest
J.J. Dubowski
V. Aimez
机构：
[1] Université de Sherbrooke,Centre de recherche en Nanofabrication et Nanocaractériasation (CRN2), Département de Génie Électrique et Génie Informatique
来源：
Applied Physics A | 2007年 / 89卷
关键词：
GaAs; Quantum Well; Gallium Oxide; Rapid Thermal Annealer Treatment; Laser Treated Sample;
D O I：
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中图分类号：
学科分类号：
摘要：
The influence of gallium arsenide surface modification induced by irradiation with a KrF excimer laser on the magnitude of the quantum well (QW) intermixing effect has been investigated in InAlGaAs/AlGaAs/GaAs QW heterostructures. The irradiation in an air environment with laser pulses of fluences between 60 and 100 mJ/cm2 has resulted in the formation of a gallium oxide-rich film at the surface. Following the annealing at 900 °C, up to 35 nm suppression of the band gap blue shift was observed in all the laser irradiated samples when compared to the non-irradiated samples. The origin of suppression has been discussed in terms of stress controlled diffusion.
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页码：423 / 426
页数：3
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