THz GaAs/AlGaAs quantum well detector

被引:0
|
作者
Patrashin, M. [1 ]
Hosako, I. [1 ]
机构
[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukui-Kitamachi, Tokyo 1848795, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have designed and tested basic operation of a GaAs/AlGaAs quantum well photodetector in THz range of spectrum (3 THz, 100 mu m). Responsivity of a few mA/W was measured, however achieving of the background-limited performance was not feasible because of high level of the dark current. Suitability of the device for practical applications will depend on further improvements of the design. We believe that better performance can be attained by optimizing the doping levels in the quantum wells. To evaluate suitability of the quantum well detectors for THz imaging, a small (up to 32 elements) prototype array will be tested.
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页码:512 / 512
页数:1
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