Charge Properties of a Condenser System Based on the Two‐Layer Dielectric SiO2–Ta2O5

被引：1
|
作者：
V. A. Pilipenko
V. N. Ponomar'
T. V. Petlitskaya
机构：
[1] “Integral” Scientific‐Production Association,
来源：
Journal of Engineering Physics and Thermophysics | 2003年 / 76卷 / 1期
关键词：
Mechanical Property; SiO2; Statistical Physic; Mechanical Stress; Threshold Voltage;
D O I：
10.1023/A:1022904316914
中图分类号：
学科分类号：
摘要：
A variant of a combined dielectric for the condensers of very large‐scale integrated circuits (VLSICs) has been proposed. Its electrophysical and mechanical properties have been analyzed. The influence of the thickness of each of the dielectrics on the effective built‐in charge, the permittivity, and the threshold voltage has been considered. Special emphasis has been placed on the residual mechanical stresses in a three‐layer dielectric system, namely, the influence of the thickness of a Ta2O5 film on the radius of curvature of the Si–SiO2–Ta2O5 system has been analyzed and the dependence of the change in the effective built‐in charge in the Ta2O5 film on the radius of curvature of the plate has been determined.
引用
收藏
页码：193 / 196
页数：3
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