Charge Properties of a Condenser System Based on the Two‐Layer Dielectric SiO2–Ta2O5

被引：1
|
作者：
V. A. Pilipenko
V. N. Ponomar'
T. V. Petlitskaya
机构：
[1] “Integral” Scientific‐Production Association,
来源：
Journal of Engineering Physics and Thermophysics | 2003年 / 76卷 / 1期
关键词：
Mechanical Property; SiO2; Statistical Physic; Mechanical Stress; Threshold Voltage;
D O I：
10.1023/A:1022904316914
中图分类号：
学科分类号：
摘要：
A variant of a combined dielectric for the condensers of very large‐scale integrated circuits (VLSICs) has been proposed. Its electrophysical and mechanical properties have been analyzed. The influence of the thickness of each of the dielectrics on the effective built‐in charge, the permittivity, and the threshold voltage has been considered. Special emphasis has been placed on the residual mechanical stresses in a three‐layer dielectric system, namely, the influence of the thickness of a Ta2O5 film on the radius of curvature of the Si–SiO2–Ta2O5 system has been analyzed and the dependence of the change in the effective built‐in charge in the Ta2O5 film on the radius of curvature of the plate has been determined.
引用
收藏
页码：193 / 196
页数：3
相关论文
共 50 条
  • [41] TIME-DEPENDENT, DIELECTRIC-BREAKDOWN CHARACTERISTICS OF TA2O5/SIO2 DOUBLE-LAYERS
    NISHIOKA, Y
    SHINRIKI, H
    MUKAI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 872 - 872
  • [42] Comparison of valence-band tunneling in pure SiO2, composite SiO2/Ta2O5, and pure Ta2O5, in MOSFETS with 1.0 nm-thick SiO2-equivalent gate dielectrics
    Shanware, A
    Massoud, HZ
    Vogel, E
    Henson, K
    Hauser, JR
    Wortman, JJ
    ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 515 - 520
  • [43] Sputtered-Anodized Ta2O5 as the Dielectric Layer for Electrowetting-on-Dielectric
    Huang, Lian-Xin
    Koo, Bonhye
    Kim, Chang-Jin 'CJ'
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2013, 22 (02) : 253 - 255
  • [44] NONSTOICHIOMETRY AND CHARGE TRANSPORT IN TA2O5
    MCHALE, AE
    TULLER, HL
    AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (03): : 404 - 404
  • [45] Effect of annealing temperature on structure and stress properties of Ta2O5/SiO2 multilayer reflective coatings
    Liu Bao-Jian
    Duan Wei-Bo
    Li Da-Qi
    Yu De-Ming
    Chen Gang
    Wang Tian-Hong
    Liu Ding-Quan
    ACTA PHYSICA SINICA, 2019, 68 (11)
  • [46] Strategies to increase laser damage performance of Ta2O5/SiO2 mirrors by modifications of the top layer design
    Schiltz, Drew
    Patel, Dinesh
    Baumgarten, Cory
    Reagan, Brendan A.
    Rocca, Jorge J.
    Menoni, Carmen S.
    APPLIED OPTICS, 2017, 56 (04) : C136 - C139
  • [47] Improvements in the laser damage behavior of Ta2O5/SiO2 interference coatings by modification of the top layer design
    Patel, D.
    Schiltz, D.
    Langton, P. F.
    Emmert, L.
    Acquaroli, L. N.
    Baumgarten, C.
    Reagan, B.
    Rocca, J. J.
    Rudolph, W.
    Markosyan, A.
    Route, R. R.
    Fejer, M.
    Menoni, C. S.
    LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2013, 2013, 8885
  • [48] Dielectric properties of Ta2O5 thin films deposited onto Ti and TiO2 layer
    In Sung Kim
    Soon Jong Jeong
    Jae Sung Song
    Pan Seok Shin
    Metals and Materials International, 2002, 8 (6) : 577 - 582
  • [49] Dielectric properties of Ta2O5 thin films deposited onto Ti and TiO2 layer
    Kim, IS
    Jeong, SJ
    Song, JS
    Shin, PS
    METALS AND MATERIALS INTERNATIONAL, 2002, 8 (06): : 577 - 582
  • [50] BAW Resonator with an Optimized SiO2/Ta2O5 Reflector for 5G Applications
    Lv, Lu
    Shuai, Yao
    Huang, Shitian
    Zhu, Dailei
    Wang, Yuedong
    Luo, Wenbo
    Wu, Chuangui
    Zhang, Wanli
    ACS OMEGA, 2022, 7 (24): : 20994 - 20999
12345