Electric-field control of spin-orbit torque in a magnetically doped topological insulator

被引：0
|
作者：
Fan Y. [1 ]
Kou X. [1 ]
Upadhyaya P. [1 ]
Shao Q. [1 ]
Pan L. [1 ]
Lang M. [1 ]
Che X. [1 ]
Tang J. [1 ]
Montazeri M. [1 ]
Murata K. [1 ]
Chang L.-T. [1 ]
Akyol M. [1 ]
Yu G. [1 ]
Nie T. [1 ]
Wong K.L. [1 ]
Liu J. [2 ]
Wang Y. [2 ]
Tserkovnyak Y. [3 ]
Wang K.L. [1 ]
机构：
[1] Department of Electrical Engineering, University of California, Los Angeles, 90095, CA
[2] Center of Electron Microscopy, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou
[3] Department of Physics and Astronomy, University of California, Los Angeles, 90095, CA
来源：
Nature Nanotechnology | 2016年 / 11卷 / 4期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1038/nnano.2015.294
中图分类号：
学科分类号：
摘要：
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies. © 2016 Macmillan Publishers Limited. All rights reserved.
引用
收藏
页码：352 / 359
页数：7
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