Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure

被引:0
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作者
Fan Y. [1 ]
Upadhyaya P. [1 ]
Kou X. [1 ]
Lang M. [1 ]
Takei S. [2 ]
Wang Z. [1 ]
Tang J. [1 ]
He L. [1 ]
Chang L.-T. [1 ]
Montazeri M. [1 ]
Yu G. [1 ]
Jiang W. [1 ]
Nie T. [1 ]
Schwartz R.N. [1 ]
Tserkovnyak Y. [2 ]
Wang K.L. [1 ]
机构
[1] Department of Electrical Engineering, University of California, Los Angeles
[2] Department of Physics and Astronomy, University of California, Los Angeles
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D O I
10.1038/nmat3973
中图分类号
学科分类号
摘要
Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great attention to spin torques arising from large spin-orbit coupling (SOC). Given the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. Here we demonstrate experimentally the magnetization switching through giant SOT induced by an in-plane current in a chromium-doped TI bilayer heterostructure. The critical current density required for switching is below 8.9 × 10 4 A cm -2 at 1.9 K. Moreover, the SOT is calibrated by measuring the effective spin-orbit field using second-harmonic methods. The effective field to current ratio and the spin-Hall angle tangent are almost three orders of magnitude larger than those reported for HMFHs. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices. © 2014 Macmillan Publishers Limited. All rights reserved.
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页码:699 / 704
页数:5
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