Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

被引：352
|
作者：
Han, Jiahao [1 ]
Richardella, A. [2 ]
Siddiqui, Saima A. [1 ]
Finley, Joseph [1 ]
Samarth, N. [2 ]
Liu, Luqiao [1 ]
机构：
[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Penn State Univ, University Pk, PA 16802 USA
来源：
PHYSICAL REVIEW LETTERS | 2017年 / 119卷 / 07期
基金：
美国国家科学基金会;
关键词：
ELECTRICAL DETECTION; SURFACE-STATES; POLARIZATION; DRIVEN;
D O I：
10.1103/PhysRevLett.119.077702
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.
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页数：5
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