Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Z.Z. Chen
B. Shen
X.Y. Zhang
R. Zhang
P. Chen
Y.G. Zhou
L. Zang
R.L. Jiang
Z.C. Huang
Y.D. Zheng
Z.S. Wu
X.T. Sun
F. Chen
机构：
[1] Department of Physics and Laboratory of Solid State Microstructures,
[2] Nanjing University,undefined
[3] Nanjing 210093,undefined
[4] P.R. China,undefined
[5] Department of Electronic Engineering,undefined
[6] Nanjing University,undefined
[7] Nanjing 210093,undefined
[8] P.R. China,undefined
来源：
Applied Physics A | 1998年 / 67卷
关键词：
PACS: 71.55.E; 72.40;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：567 / 570
页数：3
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