Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices

被引：0
|
作者：
Liang He
Hua Chen
Peng Sun
Xiaofei Jia
Chongguang Dai
Jing Liu
Long Shao
Zhaoqing Liu
机构：
[1] Xidian University,School of Advanced Materials and Nanotechnology
[2] Ankang University,School of Electronic and Information Engineering
来源：
Science China Information Sciences | 2016年 / 59卷
关键词：
ultra-deep submicron; complementary metal-oxide-semiconductor devices; single event; upset rates; charge sharing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Based on the integral method of single event upset (SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor (CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figure of merit (FOM) methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single-bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed.
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