Deep-submicron single-gate complementary metal oxide semiconductor (CMOS) technology using channel preamorphization

被引：0

作者：

Miyake, M ^{[1
]}

Kobayashi, T ^{[1
]}

Sakakibara, Y ^{[1
]}

Deguchi, K ^{[1
]}

Takahashi, M ^{[1
]}

机构：

[1] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

channel preamorphization; short-channel effect; single gate CMOS; channel doping; deep-submicron CMOS;

D O I：

10.1143/JJAP.37.1050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-submicron single-gale complementary metal oxide semiconductor (CMOS) technology using channel preamorphization (CP) is described. CP improves the short-channel behavior of nMOS as well as MOS because sharp and shallow boron channel doping is achieved. CP also suppresses reverse short-channel effects in nMOS. Utilizing CP effectively: deep-submicron single-gate CMOS with good short-channel behavior has been fabricated.

引用

页码：1050 / 1053

页数：4

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