Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses

被引：0
|
作者：
L. V. Katsoev
V. V. Katsoev
É. A. Il’ichev
机构：
[1] Moscow State Institute of Electronic Engineering (Technical University),
[2] Lukin Research Institute of Physical Problems,undefined
来源：
Semiconductors | 2009年 / 43卷
关键词：
GaAs; Semiconductor Detector; Background Impurity; Heavy Charged Particle; Capture Coefficient;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to calculate the output current of the detector as a function of its active-region’s thickness and the voltage applied across the sensor under conditions of the presence of recombination processes.
引用
收藏
页码：1667 / 1670
页数：3
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