Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models For SiO2

被引：0

作者：

Sakai A. ^{[1
,3
]}

Ishida A. ^{[1
,3
]}

Uno S. ^{[1
,3
]}

Kamakura Y. ^{[1
,3
]}

Morifuji M. ^{[2
]}

Taniguchi K. ^{[1
,3
]}

机构：

[1] Department of Electronics and Information Systems, Osaka University, Osaka

[2] Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka

[3] Department of Electronics and Information Systems, Osaka University, Osaka

来源：

Journal of Computational Electronics | 2002年 / 1卷 / 1-2期

关键词：

complex band structure; direct tunneling; gate leakage current; MOSFET; tight-binding scheme; two-band model;

D O I：

10.1023/A:1020721423626

中图分类号：

学科分类号：

摘要：

We report the calculation of gate leakage currents through the ultra-thin gate oxides (2.6–3.4 nm) in MOSFETs. We simulate J-V characteristics for the direct tunneling of valence electrons and inversion layer holes, which are measured using a charge separation technique. A two-band model is employed to express the complex band structure of the gate oxide, and its validity is discussed by calculating the complex band structure of β-cristobalite based on the second nearest neighbor sp3s* tight-binding scheme. © 2002, Kluwer Academic Publishers.

引用

页码：195 / 199

页数：4

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