Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models For SiO2

被引：0

作者：

Sakai A. ^{[1
,3
]}

Ishida A. ^{[1
,3
]}

Uno S. ^{[1
,3
]}

Kamakura Y. ^{[1
,3
]}

Morifuji M. ^{[2
]}

Taniguchi K. ^{[1
,3
]}

机构：

[1] Department of Electronics and Information Systems, Osaka University, Osaka

[2] Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka

[3] Department of Electronics and Information Systems, Osaka University, Osaka

来源：

Journal of Computational Electronics | 2002年 / 1卷 / 1-2期

关键词：

complex band structure; direct tunneling; gate leakage current; MOSFET; tight-binding scheme; two-band model;

D O I：

10.1023/A:1020721423626

中图分类号：

学科分类号：

摘要：

We report the calculation of gate leakage currents through the ultra-thin gate oxides (2.6–3.4 nm) in MOSFETs. We simulate J-V characteristics for the direct tunneling of valence electrons and inversion layer holes, which are measured using a charge separation technique. A two-band model is employed to express the complex band structure of the gate oxide, and its validity is discussed by calculating the complex band structure of β-cristobalite based on the second nearest neighbor sp3s* tight-binding scheme. © 2002, Kluwer Academic Publishers.

引用

页码：195 / 199

页数：4

共 50 条

[21] Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model
Houssa, A
Afanas'ev, VV
Stesmans, A
Heyns, MM
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 367 - 371
[22] Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides:: predictions from microscopic models
Städele, M
Fischer, B
Tuttle, BR
Hess, K
SUPERLATTICES AND MICROSTRUCTURES, 2000, 28 (5-6) : 517 - 524
[23] Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
Shih, WK
Wang, EX
Jallepalli, S
Leon, F
Maziar, CM
Taschjr, AF
SOLID-STATE ELECTRONICS, 1998, 42 (06) : 997 - 1006
[24] Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs
Städele, M
Fischer, B
Tuttle, BR
Hess, K
SOLID-STATE ELECTRONICS, 2002, 46 (07) : 1027 - 1032
[25] Ionizing radiation induced leakage current on ultra-thin gate oxides
Scarpa, A
Paccagnella, A
Montera, F
Ghibaudo, G
Pananakakis, G
Ghidini, G
Fuochi, PG
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) : 1818 - 1825
[26] Self-consistent model on direct-tunneling current of ultra-thin gate dielectric MOSFET
Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Guti Dianzixue Yanjiu Yu Jinzhan, 2007, 4 (545-549):
[27] Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
Hinkle, CL
Fulton, C
Nemanich, RJ
Lucovsky, G
APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 240 - 245
[28] Tunneling current through MIS structures with ultra-thin insulators
Fujioka, H
Wann, HJ
Park, DG
King, YC
Chyan, YF
Oshima, M
Hu, C
MATERIALS RELIABILITY IN MICROELECTRONICS VI, 1996, 428 : 415 - 420
[29] Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures
Wei, JL
Mao, LF
Xu, MZ
Tan, CH
SOLID-STATE ELECTRONICS, 2000, 44 (11) : 2021 - 2025
[30] Statistical Design of Ultra-Thin SiO2 for Nanodevices
Hashim, U.
Fatah, M. F. A. Abdul
Ahmad, I.
Majlis, B. Y.
SAINS MALAYSIANA, 2009, 38 (04): : 553 - 557

← 1 2 3 4 5 →