The structural and optical properties of GaSb/inGaAs type-II quantum dots grown on inP (100) substrate

被引：4
|
作者：
Shuhui Z. [1 ,2 ]
Lu W. [2 ]
Zhenwu S. [2 ]
Yanxiang C. [2 ]
Haitao T. [2 ,3 ]
Huaiju G. [2 ]
Haiqiang J. [2 ]
Wenxin W. [2 ]
Hong C. [2 ]
Liancheng Z. [1 ]
机构：
[1] School of Materials Science and Engineering, Harbin Institute of Technology, Harbin
[2] National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing
[3] Engineering Research Center of Solid-State Lighting, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin
来源：
Nanoscale Research Letters | / 7卷 / 1期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
GaSb; Excitation Power; Direct Interband Transition; Increase Excitation Power; InGaAs Buffer Layer;
D O I：
10.1186/1556-276X-7-87
中图分类号：
学科分类号：
摘要：
We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. © 2012 Shuhui et al.
引用
收藏
页码：1 / 6
页数：5
相关论文
共 50 条
  • [1] Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate
    Zhang, S. H.
    Wang, L.
    Shi, Z. W.
    Tian, H. T.
    Gao, H. J.
    Wang, W. X.
    Chen, H.
    Li, H. T.
    Zhao, L. C.
    APPLIED PHYSICS LETTERS, 2012, 100 (25)
  • [2] Effect of Inx Ga1-xAs Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates
    Chen, Yu-Long
    Gao, You
    Chen, Hong
    Zhang, Hui
    He, Miao
    Li, Shu-Ti
    Zheng, Shu-Wen
    CHINESE PHYSICS LETTERS, 2016, 33 (09)
  • [3] Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy
    Yuan, Qing
    Liang, Baolai
    Luo, Shiping
    Wang, Ying
    Yan, Qigeng
    Wang, Shufang
    Fu, Guangsheng
    Mazur, Yuriy, I
    Maidaniuk, Yurii
    Ware, Morgan E.
    Salamo, Gregory J.
    NANOTECHNOLOGY, 2020, 31 (31)
  • [4] In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (100) GaAs Substrate
    Khoklang, Kamonchanok
    Kiravittaya, Suwit
    Thainoi, Supachok
    Panyakeow, Somsak
    Ratanathammaphan, Somchai
    2015 12TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING/ELECTRONICS, COMPUTER, TELECOMMUNICATIONS AND INFORMATION TECHNOLOGY (ECTI-CON), 2015,
  • [5] Type-II InAs/GaSb superlattice grown on InP substrate
    Miura, K.
    Iguchi, Y.
    Kawamura, Y.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 121 - 124
  • [6] Effect of InxGa1-xAs Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-Ⅱ Quantum Dots Grown on InP (100) Substrates
    陈虞龙
    高优
    陈弘
    张辉
    何苗
    李述体
    郑树文
    Chinese Physics Letters, 2016, 33 (09) : 124 - 127
  • [7] Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy
    Kawazu, Takuya
    Sakaki, Hiroyuki
    APPLIED PHYSICS LETTERS, 2010, 97 (26)
  • [8] Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate
    Inada, H.
    Miura, K.
    Iguchi, Y.
    Kawamura, Y.
    Murooka, J.
    Katayama, H.
    Kanno, S.
    Takekawa, T.
    Kimata, M.
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [9] GaSb/GaAs type-II quantum dots grown by droplet epitaxy
    Liang, Baolai
    Lin, Andrew
    Pavarelli, Nicola
    Reyner, Charles
    Tatebayashi, Jun
    Nunna, Kalyan
    He, Jun
    Ochalski, Tomasz J.
    Huyet, Guillaume
    Huffaker, Diana L.
    NANOTECHNOLOGY, 2009, 20 (45)
  • [10] Structural, Optical And Electrical Properties Of MOVPE Grown InP/GaAs Type-II Ultrathin Quantum Well
    Singh, S. D.
    Dixit, V. K.
    Porwal, S.
    Kumar, Ravi
    Khamari, Shailesh K.
    Srivastava, A. K.
    Ganguli, Tapas
    Oak, S. M.
    INTERNATIONAL CONFERENCE ON PHYSICS OF EMERGING FUNCTIONAL MATERIALS (PEFM-2010), 2010, 1313 : 250 - +
12345