The structural and optical properties of GaSb/inGaAs type-II quantum dots grown on inP (100) substrate

被引：4

作者：

Shuhui Z. ^{[1
,2
]}

Lu W. ^{[2
]}

Zhenwu S. ^{[2
]}

Yanxiang C. ^{[2
]}

Haitao T. ^{[2
,3
]}

Huaiju G. ^{[2
]}

Haiqiang J. ^{[2
]}

Wenxin W. ^{[2
]}

Hong C. ^{[2
]}

Liancheng Z. ^{[1
]}

机构：

[1] School of Materials Science and Engineering, Harbin Institute of Technology, Harbin

[2] National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing

[3] Engineering Research Center of Solid-State Lighting, School of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin

来源：

Nanoscale Research Letters | / 7卷 / 1期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

GaSb; Excitation Power; Direct Interband Transition; Increase Excitation Power; InGaAs Buffer Layer;

D O I：

10.1186/1556-276X-7-87

中图分类号：

学科分类号：

摘要：

We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor. © 2012 Shuhui et al.

引用

页码：1 / 6

页数：5

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