Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate

被引：5
|
作者：
Zhang, S. H. [1 ,2 ]
Wang, L. [2 ]
Shi, Z. W. [2 ]
Tian, H. T. [2 ]
Gao, H. J. [2 ]
Wang, W. X. [2 ]
Chen, H. [2 ]
Li, H. T. [1 ]
Zhao, L. C. [1 ]
机构：
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[2] Chinese Acad Sci, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys,Inst Phys, Beijing 100190, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 25期
基金：
国家高技术研究发展计划(863计划);
关键词：
SIZE;
D O I：
10.1063/1.4729939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effect of GaSb/InGaAs quantum dots (QDs) morphology and In composition in InGaAs interlayer on the optical properties of GaSb/InGaAs QD material system was studied in this work. The interband transition of GaSb QD and type-II transition from the InGaAs conduction band to the GaSb hole level were observed. It was found that both QD morphology and In composition in InGaAs interlayer had an influence on the optical properties of GaSb/InGaAs QD material system. Note that the linear relationship exists between In composition in InGaAs interlayer and photoluminescence peak positions, which indicates the structural characteristics of the InGaAs matrix can be used as an important tool to adjust the optical properties of GaSb/InGaAs QD material system. This experimental result shows that the optical properties of GaSb/InGaAs type-II QD material system can be more precisely controlled than the widely studied GaSb/GaAs QD material system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729939]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] The structural and optical properties of GaSb/inGaAs type-II quantum dots grown on inP (100) substrate
    Shuhui Z.
    Lu W.
    Zhenwu S.
    Yanxiang C.
    Haitao T.
    Huaiju G.
    Haiqiang J.
    Wenxin W.
    Hong C.
    Liancheng Z.
    Nanoscale Research Letters, 7 (1): : 1 - 6
  • [2] Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy
    Yuan, Qing
    Liang, Baolai
    Luo, Shiping
    Wang, Ying
    Yan, Qigeng
    Wang, Shufang
    Fu, Guangsheng
    Mazur, Yuriy, I
    Maidaniuk, Yurii
    Ware, Morgan E.
    Salamo, Gregory J.
    NANOTECHNOLOGY, 2020, 31 (31)
  • [3] Type-II InAs/GaSb superlattice grown on InP substrate
    Miura, K.
    Iguchi, Y.
    Kawamura, Y.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 121 - 124
  • [4] Effect of Inx Ga1-xAs Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates
    Chen, Yu-Long
    Gao, You
    Chen, Hong
    Zhang, Hui
    He, Miao
    Li, Shu-Ti
    Zheng, Shu-Wen
    CHINESE PHYSICS LETTERS, 2016, 33 (09)
  • [5] Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy
    Kawazu, Takuya
    Sakaki, Hiroyuki
    APPLIED PHYSICS LETTERS, 2010, 97 (26)
  • [6] Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate
    Inada, H.
    Miura, K.
    Iguchi, Y.
    Kawamura, Y.
    Murooka, J.
    Katayama, H.
    Kanno, S.
    Takekawa, T.
    Kimata, M.
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [7] GaSb/GaAs type-II quantum dots grown by droplet epitaxy
    Liang, Baolai
    Lin, Andrew
    Pavarelli, Nicola
    Reyner, Charles
    Tatebayashi, Jun
    Nunna, Kalyan
    He, Jun
    Ochalski, Tomasz J.
    Huyet, Guillaume
    Huffaker, Diana L.
    NANOTECHNOLOGY, 2009, 20 (45)
  • [8] Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well
    Wang, Ying
    Li, Yajie
    Guo, Yingnan
    Wang, Shufang
    Fu, Guangsheng
    Mazur, Yuriy i.
    Ware, Morgan e.
    Salamo, Gregory j.
    Liang, Baolai
    OPTICS EXPRESS, 2025, 33 (04): : 7183 - 7194
  • [9] Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer
    Kawazu, Takuya
    Noda, Takeshi
    Mano, Takaaki
    Sakuma, Yoshiki
    Sakaki, Hiroyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
  • [10] Growth and optical properties of type-II InP/GaAs self-organized quantum dots
    Wang, BZ
    Chua, SJ
    APPLIED PHYSICS LETTERS, 2001, 78 (05) : 628 - 630
12345