Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate

被引：5

作者：

Zhang, S. H. ^{[1
,2
]}

Wang, L. ^{[2
]}

Shi, Z. W. ^{[2
]}

Tian, H. T. ^{[2
]}

Gao, H. J. ^{[2
]}

Wang, W. X. ^{[2
]}

Chen, H. ^{[2
]}

Li, H. T. ^{[1
]}

Zhao, L. C. ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

[2] Chinese Acad Sci, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys,Inst Phys, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 25期

基金：

国家高技术研究发展计划(863计划);

关键词：

SIZE;

D O I：

10.1063/1.4729939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effect of GaSb/InGaAs quantum dots (QDs) morphology and In composition in InGaAs interlayer on the optical properties of GaSb/InGaAs QD material system was studied in this work. The interband transition of GaSb QD and type-II transition from the InGaAs conduction band to the GaSb hole level were observed. It was found that both QD morphology and In composition in InGaAs interlayer had an influence on the optical properties of GaSb/InGaAs QD material system. Note that the linear relationship exists between In composition in InGaAs interlayer and photoluminescence peak positions, which indicates the structural characteristics of the InGaAs matrix can be used as an important tool to adjust the optical properties of GaSb/InGaAs QD material system. This experimental result shows that the optical properties of GaSb/InGaAs type-II QD material system can be more precisely controlled than the widely studied GaSb/GaAs QD material system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729939]

引用

页数：4

共 50 条

[31] Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy
Kawazu, T.
Noda, T.
Sakuma, Y.
Sakaki, H.
AIP ADVANCES, 2016, 6 (04):
[32] Effects of Interface Grading on Electronic States and Optical Transitions in GaSb Type-II Quantum Dots in GaAs
Kawazu, Takuya
Sakaki, Hiroyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[33] Low Dark Current SWIR Photodiode with InGaAs/GaAsSb Type II Quantum Wells grown on InP Substrate
Inada, H.
Miura, K.
Nagai, Y.
Tsubokura, M.
Moto, A.
Iguchi, Y.
Kawamura, Y.
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 149 - +
[34] Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots
Singh, S. D.
Porwal, S.
Mondal, Puspen
Srivastava, A. K.
Mukherjee, C.
Dixit, V. K.
Sharma, T. K.
Oak, S. M.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (22)
[35] Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studies
Saidi, I.
Neffati, R.
Ben Radhia, S.
Boujdaria, K.
Lemaitre, A.
Bernardot, F.
Testelin, C.
JOURNAL OF APPLIED PHYSICS, 2016, 120 (03)
[36] Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots
Hsu, K. S.
Chiu, T. T.
Lin, Wei-Hsun
Chen, K. L.
Shih, M. H.
Lin, Shih-Yen
Chang, Yia-Chung
APPLIED PHYSICS LETTERS, 2011, 98 (05)
[37] Far infrared response of InAs-GaSb type-II quantum dots
Broido, DA
Kempa, K
Rössler, U
PHYSICA E, 2000, 6 (1-4): : 466 - 469
[38] Energy-selective charging of type-II GaSb/GaAs quantum dots
Geller, A
Kapteyn, C
Stock, E
Müller-Kirsch, L
Heitz, R
Bimberg, D
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 474 - 478
[39] Growth and optical properties of self-assembled type II GaSb/GaAs quantum dots
Suzuki, K
Hogg, RA
Tachibana, K
Arakawa, Y
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 155 - 158
[40] Nucleation features and energy levels of type-II InAsSbP quantum dots grown on InAs(100) substrate
Gambaryan, K. M.
Aroutiounian, V. M.
Harutyunyan, V. G.
APPLIED PHYSICS LETTERS, 2012, 101 (09)

← 1 2 3 4 5 →