On the Atomic-Force Microscopy and Electrical Properties of Single-Crystal Bismuth Films

被引：0
|
作者：
V. M. Grabov
V. A. Gerega
E. V. Demidov
V. A. Komarov
M. V. Starytsin
A. V. Suslov
M. V. Suslov
机构：
[1] Herzen State Pedagogical University of Russia,
[2] National Research Center “Kurchatov Institute”–Prometey–Central Scientific Research Institute of Structural Materials,undefined
来源：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2020年 / 14卷
关键词：
bismuth; thin film; single-crystal film; atomic-force microscopy; transport phenomena;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Abstract—A method for creating single-crystal bismuth films by melting and subsequent normal directed crystallization without a seed under a protective coating in a nitrogen atmosphere is proposed and tested. The high quality of the crystal structure of these films is confirmed by atomic-force microscopy and X-ray diffraction analysis. The specific resistance, magnetoresistance, and Hall coefficient are measured in the temperature range of 77–300 K. The electrical and galvanomagnetic coefficients of single-crystal bismuth films are compared with similar coefficients for block bismuth films created by thermal evaporation in vacuum. The mobilities of electrons and holes are determined in the temperature range 77–300 K for the studied structures.
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页码：913 / 917
页数：4
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