ATOMIC IMAGING OF AN INSE SINGLE-CRYSTAL SURFACE WITH ATOMIC-FORCE MICROSCOPE

被引：16

作者：

UOSAKI, K

KOINUMA, M

机构：

[1] Department of Chemistry, Faculty of Science, Hokkaido University

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic force microscope was employed to observed in air the surface atomic structure of InSe, one of III-VI compound semiconductors with layered structures. Atomic arrangements were observed in both n-type and p-type materials. The observed structures are in good agreement with those expected from bulk crystal structures. The atomic images became less clear by repeating the imaging process. Wide area imaging after the imaging of small area clearly showed that a mound was created at the spot previously imaged.

引用

页码：1675 / 1678

页数：4

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