Role of Yttria-stabilized Zirconia Produced by Ion-beam-assisted Deposition on the Properties of RuO2 on SiO2/Si

被引：0
|
作者：
Q. X. Jia
P. Arendt
J. R. Groves
Y. Fan
J. M. Roper
S. R. Foltyn
机构：
[1] MS K763 Los Alamos National Laboratory,Materials Science and Technology Division
来源：
Journal of Materials Research | 1998年 / 13卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΔ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.
引用
收藏
页码：2461 / 2464
页数：3
相关论文
共 50 条
  • [1] Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si
    Jia, QX
    Arendt, P
    Groves, JR
    Fan, Y
    Roper, JM
    Foltyn, SR
    JOURNAL OF MATERIALS RESEARCH, 1998, 13 (09) : 2461 - 2464
  • [2] Processing dependence of biaxial texture in yttria-stabilized zirconia by ion-beam-assisted deposition
    Chudzik, MP
    Erck, R
    Lanagan, MT
    Kannewurf, CR
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1999, 9 (02) : 1490 - 1493
  • [3] Processing dependence of biaxial texture in yttria-stabilized zirconia by ion-beam-assisted deposition
    Argonne Natl Lab, Argonne, United States
    IEEE Trans Appl Supercond, 2 II (1490-1493):
  • [4] Channel and temperature effect on the growth of yttria-stabilized zirconia films fabricated by ion-beam-assisted deposition
    Yuan, J
    Yang, GQ
    Ren, CX
    Liu, XH
    Zou, SC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 837 - 840
  • [5] In-plane texture study of the Yttria-stabilized Zirconia films fabricated by ion-beam-assisted deposition
    Yuan, J
    Yang, GQ
    Mao, YJ
    Ren, XC
    Liu, XH
    Zou, SC
    ION IMPLANTATION TECHNOLOGY - 96, 1997, : 729 - 732
  • [6] Electrochemical promotion of RuO2 catalyst dispersed on an yttria-stabilized zirconia monolith
    Wodiunig, S
    Bokeloh, F
    Nicole, J
    Comninellis, C
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (06) : 281 - 283
  • [7] Deposition of epitaxial yttria-stabilized zirconia on single-crystal Si and subsequent growth of an amorphous SiO2 interlayer
    Jia, QX
    Wu, XD
    Zhou, DS
    Foltyn, SR
    Tiwari, P
    Peterson, DE
    Mitchell, TE
    PHILOSOPHICAL MAGAZINE LETTERS, 1995, 72 (06) : 385 - 391
  • [8] The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam assisted deposition
    Ressler, KG
    Sonnenberg, N
    Cima, MJ
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (01) : 35 - 42
  • [9] Growth of biaxially textured yttria-stabilized zirconia thin films on Si(111) substrate by ion beam assisted deposition
    Mu, HC
    Ren, CX
    Jiang, BY
    Ding, XZ
    Yu, YH
    Wang, X
    Liu, XH
    Zhou, GE
    Jia, YB
    CHINESE PHYSICS LETTERS, 2000, 17 (03) : 221 - 223
  • [10] Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors
    Ma, B
    Li, M
    Fisher, BL
    Balachandran, U
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2002, 15 (07): : 1083 - 1087
12345