Role of Yttria-stabilized Zirconia Produced by Ion-beam-assisted Deposition on the Properties of RuO2 on SiO2/Si

被引：0
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作者：
Q. X. Jia
P. Arendt
J. R. Groves
Y. Fan
J. M. Roper
S. R. Foltyn
机构：
[1] MS K763 Los Alamos National Laboratory,Materials Science and Technology Division
来源：
Journal of Materials Research | 1998年 / 13卷
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摘要：
Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΔ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.
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页码：2461 / 2464
页数：3
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