Mechanical stress measurements using micro-Raman spectroscopy

被引：0
|
作者：
I. De Wolf
H. E. Maes
机构：
[1] IMEC,
[2] Kapeldreef 75,undefined
[3] B-3001 Leuven,undefined
[4] Belgium,undefined
来源：
Microsystem Technologies | 1998年 / 5卷
关键词：
Spectroscopy; Silicon; Mechanical Stress; Stress Measurement; Solder Bump;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
 The application of micro-Raman spectroscopy for measurements of mechanical stress in silicon microelectronics devices is discussed. The advantages and disadvantages of the technique are shown through different examples such as Si3N4 and metal lines, isolation structures and solder bumps.
引用
收藏
页码：13 / 17
页数：4
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