Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures

被引:0
|
作者
Yu. A. Kabalnov
A. N. Trufanov
S. V. Obolensky
机构
[1] Sedakov Scientific Research Institute of Measurement Systems,
[2] Lobachevsky University of Nizhny Novgorod,undefined
来源
Semiconductors | 2019年 / 53卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:368 / 374
页数:6
相关论文
共 50 条
  • [31] SCHOTTKY GATE FET ON SILICON-ON-SAPPHIRE
    KAPLAN, SH
    LEGAT, WH
    THUN, RE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C144 - C144
  • [32] CHARACTERIZATION OF SILICON-ON-SAPPHIRE IGFET TRANSISTORS
    ELMANSY, YA
    CAUGHEY, DM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1148 - 1153
  • [33] Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires
    Xu, Mingkun
    Xue, Zhaoguo
    Wang, Jimmy
    Zhao, Yaolong
    Duan, Yao
    Zhu, Guangyao
    Yu, Linwei
    Xu, Jun
    Wang, Junzhuan
    Shi, Yi
    Chen, Kunji
    Roca i Cabarrocas, Pere
    NANO LETTERS, 2016, 16 (12) : 7317 - 7324
  • [34] SILICON-ON-SAPPHIRE DEVICE PHOTOCONDUCTION PREDICTIONS
    PHILLIPS, DH
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 217 - 220
  • [35] Coulomb blockade in a silicon-on-sapphire nanowire
    Dovinos, D
    Hasko, DG
    Helin, Z
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 199 - 202
  • [36] Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
    Alexandrov, P. A.
    Demakov, K. D.
    Shemardov, S. G.
    Kuznetsov, Yu. Yu.
    SEMICONDUCTORS, 2013, 47 (02) : 298 - 300
  • [37] Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
    P. A. Alexandrov
    K. D. Demakov
    S. G. Shemardov
    Yu. Yu. Kuznetsov
    Semiconductors, 2013, 47 : 298 - 300
  • [38] Investigation of avalanche photodiodes radiation hardness for baryonic matter studies
    Kushpil V.
    Mikhaylov V.
    Ladygin V.P.
    Kugler A.
    Kushpil S.
    Svoboda O.
    Tlustý P.
    Physics of Particles and Nuclei Letters, 2016, 13 (1) : 120 - 126
  • [39] Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films
    Rajesh Kumar
    H. S. Mavi
    A. K. Shukla
    Silicon, 2010, 2 : 25 - 31
  • [40] HETEROEPITAXIAL GROWTH AND CHARACTERIZATION OF GAAS ON SILICON-ON-SAPPHIRE AND SAPPHIRE SUBSTRATES
    HUMPHREYS, TP
    MINER, CJ
    POSTHILL, JB
    DAS, K
    SUMMERVILLE, MK
    NEMANICH, RJ
    SUKOW, CA
    PARIKH, NR
    APPLIED PHYSICS LETTERS, 1989, 54 (17) : 1687 - 1689