Nitride-based semiconductors for blue and green light-emitting devices

被引:0
|
作者
F. A. Ponce
D. P. Bour
机构
[1] Xerox Palo Alto Research Center,
来源
Nature | 1997年 / 386卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light. Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing.
引用
收藏
页码:351 / 359
页数:8
相关论文
共 50 条
  • [1] NItride-based semiconductors for blue and green light-emitting devices
    Ponce, FA
    Bour, DP
    NATURE, 1997, 386 (6623) : 351 - 359
  • [2] The evolution of nitride-based light-emitting devices
    Akasaki, I
    Kamiyama, S
    Amano, H
    IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (01): : 2 - 9
  • [3] The evolution of nitride-based light-emitting devices
    Akasaki, Isamu
    Kamiyama, Satoshi
    Amano, Hiroshi
    IEICE Transactions on Electronics, 2002, E85-C (1 SPEC.) : 2 - 9
  • [4] III-V nitride semiconductors for high performance blue and green light-emitting devices
    Steigerwald, D
    Rudaz, S
    Liu, H
    Kern, RS
    Gotz, W
    Fletcher, R
    JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1997, 49 (09): : 18 - 23
  • [5] III–V Nitride semiconductors for high-performance blue and green light-emitting devices
    Daniel Steigerwald
    Serge Rudaz
    Heng Liu
    R. Scott Kern
    Werner Götz
    Robert Fletcher
    JOM, 1997, 49 : 18 - 23
  • [6] Enhancement of hole injection for nitride-based light-emitting devices
    Komirenko, SM
    Kim, KW
    Kochelap, VA
    Zavada, JM
    SOLID-STATE ELECTRONICS, 2003, 47 (01) : 169 - 171
  • [7] Nitride-based light-emitting solar cell
    Kuwahara, Y.
    Fujiyama, Y.
    Iwaya, M.
    Kamiyama, S.
    Amano, H.
    Akasaki, I.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [8] Light-emitting devices based on gallium nitride and related compound semiconductors
    Koike, M
    Shibata, N
    Yamasaki, S
    Nagai, S
    Asami, S
    Kato, H
    Koide, N
    Amano, H
    Akasaki, I
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 889 - 895
  • [9] WIDEGAP COLUMN-III NITRIDE SEMICONDUCTORS FOR UV/BLUE LIGHT-EMITTING DEVICES
    AKASAKI, I
    AMANO, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) : 2266 - 2271
  • [10] Recent progress of nitride-based light emitting devices
    Mukai, T
    Nagahama, S
    Sano, M
    Yanamoto, T
    Morita, D
    Mitani, T
    Narukawa, Y
    Yamamoto, S
    Niki, I
    Yamada, M
    Sonobe, S
    Shioji, S
    Deguchi, K
    Naitou, T
    Tamaki, H
    Murazaki, Y
    Kameshima, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01): : 52 - 57