Nitride-based semiconductors for blue and green light-emitting devices

被引:0
|
作者
F. A. Ponce
D. P. Bour
机构
[1] Xerox Palo Alto Research Center,
来源
Nature | 1997年 / 386卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light. Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing.
引用
收藏
页码:351 / 359
页数:8
相关论文
共 50 条
  • [21] Group III nitride-based UV light emitting devices
    Amano, H
    Takanami, S
    Iwaya, M
    Kamiyama, S
    Akasaki, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195 (03): : 491 - 495
  • [22] The Effect of Electrode Layout on Nitride-Based Light-Emitting Diodes
    Chiou, Yu-Zung
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (04) : 647 - 651
  • [23] III-V nitride-based light-emitting diodes
    Nakamura, S
    DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 496 - 500
  • [24] Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices
    Talnishnikh, N. A.
    Ivanov, A. E.
    Shabunina, E. I.
    Shmidt, N. M.
    OPTICS AND SPECTROSCOPY, 2024, 132 (02) : 193 - 195
  • [25] Group III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes
    Nakamura, S
    HIGH BRIGHTNESS LIGHT EMITTING DIODES, 1997, 48 : 391 - 443
  • [26] Group III nitride semiconductors for short wavelength light-emitting devices
    Orton, JW
    Foxon, CT
    REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (01) : 1 - +
  • [27] Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes
    Zheng, Zhiyuan
    Chen, Zimin
    Xian, Yulun
    Fan, Bingfeng
    Huang, Shanjin
    Jia, Weiqing
    Wu, Zhisheng
    Wang, Gang
    Jiang, Hao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (07)
  • [28] Leakage Current Characteristics of Nitride-Based InGaN Light-Emitting Diode
    Kim, Kyu-Sang
    Kim, Jin-Ha
    Cho, S. N.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (08) : 483 - 485
  • [29] Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces
    Savchenko, Grigorii
    Shabunina, Evgeniia
    Chernyakov, Anton
    Talnishnikh, Nadezhda
    Ivanov, Anton
    Abramov, Alexandr
    Zakgeim, Alexander
    Kuchinskii, Vladimir
    Sokolovskii, Grigorii
    Averkiev, Nikita
    Shmidt, Natalia
    NANOMATERIALS, 2024, 14 (13)
  • [30] Nitride-based green light emitting diodes grown by temperature ramping
    Liu, CH
    Su, YK
    Wen, TC
    Chang, SJ
    Chuang, RW
    JOURNAL OF CRYSTAL GROWTH, 2003, 254 (3-4) : 336 - 341