The evolution of nitride-based light-emitting devices

被引:0
|
作者
Akasaki, I [1 ]
Kamiyama, S
Amano, H
机构
[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, High Tech Res Ctr, Nagoya, Aichi 4688502, Japan
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2002年 / E85C卷 / 01期
关键词
nitride semiconductors; MOVPE; low-temperature buffer layer; conductivity control; blue light-emitting devices;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Breakthroughs in crystal growth and conductivity control of nitride semiconductors during last two decades have led to such developments as high-brightness blue and green light-emitting diodes and long-lived violet laser diodes and so on. All of these nitride-based devices are robust and the most environmentally-friendly ones available. They enable us to save tremendous amount of energy and will be key devices in advanced information technology. Further progress in the area of crystal growth and device engineering will open up new frontier devices based on nitride semiconductors. In this paper, the evolution of nitride-based light-emitting devices is reviewed and the key issues, which must be addressed for nitrides to be fully developed, are discussed.
引用
收藏
页码:2 / 9
页数:8
相关论文
共 50 条
  • [1] The evolution of nitride-based light-emitting devices
    Akasaki, Isamu
    Kamiyama, Satoshi
    Amano, Hiroshi
    [J]. IEICE Transactions on Electronics, 2002, E85-C (1 SPEC.) : 2 - 9
  • [2] Enhancement of hole injection for nitride-based light-emitting devices
    Komirenko, SM
    Kim, KW
    Kochelap, VA
    Zavada, JM
    [J]. SOLID-STATE ELECTRONICS, 2003, 47 (01) : 169 - 171
  • [3] NItride-based semiconductors for blue and green light-emitting devices
    Ponce, FA
    Bour, DP
    [J]. NATURE, 1997, 386 (6623) : 351 - 359
  • [4] Nitride-based semiconductors for blue and green light-emitting devices
    F. A. Ponce
    D. P. Bour
    [J]. Nature, 1997, 386 : 351 - 359
  • [5] Nitride-based light-emitting solar cell
    Kuwahara, Y.
    Fujiyama, Y.
    Iwaya, M.
    Kamiyama, S.
    Amano, H.
    Akasaki, I.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [6] Recent progress of nitride-based light emitting devices
    Mukai, T
    Nagahama, S
    Sano, M
    Yanamoto, T
    Morita, D
    Mitani, T
    Narukawa, Y
    Yamamoto, S
    Niki, I
    Yamada, M
    Sonobe, S
    Shioji, S
    Deguchi, K
    Naitou, T
    Tamaki, H
    Murazaki, Y
    Kameshima, M
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01): : 52 - 57
  • [7] Efficiency droop in nitride-based light-emitting diodes
    Piprek, Joachim
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (10): : 2217 - 2225
  • [8] High-flux and high-efficiency nitride-based light-emitting devices
    Gardner, NF
    Bhat, J
    Collins, D
    Cook, L
    Craford, MG
    Fletcher, RM
    Grillot, P
    Götz, WK
    Kueper, M
    Khare, R
    Kim, A
    Krames, MR
    Harbers, G
    Ludowise, M
    Martin, PS
    Misra, M
    Mueller, G
    Mueller-Mach, R
    Rudaz, S
    Shen, YC
    Steigerwald, D
    Stockman, SA
    Subramanya, S
    Trottier, T
    Wierer, JJ
    [J]. 2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 641 - 642
  • [9] Nitride-based cascade near white light-emitting diodes
    Chen, CH
    Chang, SJ
    Su, YK
    Sheu, JK
    Chen, JF
    Kuo, CH
    Lin, YC
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (07) : 908 - 910
  • [10] III-V nitride-based light-emitting diodes
    Nakamura, S
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 496 - 500