On the possibility of the direct study of local electron-phonon interaction in semiconductors

被引：0

作者：

V. Gavryushin

机构：

[1] Vilnius University,Institute of Materials Science and Applied Research and Semiconductor Physics Department

来源：

Journal of Experimental and Theoretical Physics Letters | 2003年 / 78卷

关键词：

71.38.−k; 71.55.Gs;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Local electron-phonon interaction in deep-level states of defects in semiconductors was studied by induced absorption spectroscopy. Using ZnS:Cu single crystals as an example, it was shown that the laser modulation of two-step impurity absorption is an efficient technique for direct investigations of phonon relaxation effects in deep-level states. It was shown that the localized states in ZnS are prone to extremely strong electron-phonon coupling.

引用

页码：309 / 313

页数：4

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