On the possibility of the direct study of local electron-phonon interaction in semiconductors

被引：3

作者：

Gavryushin, V ^{[1
]}

机构：

[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2010 Vilnius, Lithuania

[2] Vilnius State Univ, Semicond Phys Dept, LT-2010 Vilnius, Lithuania

来源：

JETP LETTERS | 2003年 / 78卷 / 05期

关键词：

D O I：

10.1134/1.1625731

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Local electron-phonon interaction in deep-level states of defects in semiconductors was studied by induced absorption spectroscopy. Using ZnS:Cu single crystals as an example, it was shown that the laser modulation of two-step impurity absorption is an efficient technique for direct investigations of phonon relaxation effects in deep-level states. It was shown that the localized states in ZnS are prone to extremely strong electron-phonon coupling. (C) 2003 MAIK "Nauka/Interperiodica".

引用

页码：309 / 313

页数：5

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