On the possibility of the direct study of local electron-phonon interaction in semiconductors

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作者
V. Gavryushin
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[1] Vilnius University,Institute of Materials Science and Applied Research and Semiconductor Physics Department
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71.38.−k; 71.55.Gs;
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摘要
Local electron-phonon interaction in deep-level states of defects in semiconductors was studied by induced absorption spectroscopy. Using ZnS:Cu single crystals as an example, it was shown that the laser modulation of two-step impurity absorption is an efficient technique for direct investigations of phonon relaxation effects in deep-level states. It was shown that the localized states in ZnS are prone to extremely strong electron-phonon coupling.
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页码:309 / 313
页数:4
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