Resonant tunneling and a nonlinear response in RF fields

被引:0
|
作者
V. F. Elesin
机构
[1] Moscow Institute of Engineering Physics (Technical University),
关键词
Output Power; Elementary Particle; Electron Transition; Analytical Form; Perturbation Method;
D O I
暂无
中图分类号
学科分类号
摘要
The problem of resonant tunneling through a double-barrier nanostructure in a strong alternating electric field is solved completely. To this end, a perturbation method is proposed. Electron wavefunctions and a nonlinear response are obtained in analytical form over wide ranges of field frequencies and amplitudes, using the perturbation method and the semiclassical approximation. The semiclassical expression for the current allows for contributions of all orders with respect to the field, i.e., electron transitions with the emission and absorption of any number of photons. This enables one to find the limits of resonant current and output power. The case of ℏω≫Γ is considered, where ℏ is the rationalized Planck constant, ω is the field frequency, and Γ is the resonance level width. It is established that the maximum resonant current is approximately as high as half the resonant constant current. For the quantum regime of oscillation, the output power can be 106–107 W/cm2 at ω=1013 s−1 and the output power rises with ω, in contrast to the well-known classical regime, where the power decreases rapidly.
引用
收藏
页码:343 / 357
页数:14
相关论文
共 50 条
  • [31] TERAHERTZ RESPONSE OF RESONANT-TUNNELING DIODES
    SCOTT, JS
    KAMINSKI, JP
    ALLEN, SJ
    CHOW, DH
    LUI, M
    LIU, TY
    SURFACE SCIENCE, 1994, 305 (1-3) : 389 - 392
  • [32] AC linear response of a resonant tunneling system
    Valeyev, VG
    Hagmann, MJ
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2000, 80 (4-5) : 1007 - 1010
  • [33] Manipulation of tunneling frequencies using magnetic fields for resonant tunneling effects of surface plasmons
    Lan, Yung-Chiang
    Chang, Yun-Chorng
    Lee, Peng-Hsiao
    APPLIED PHYSICS LETTERS, 2007, 90 (17)
  • [34] Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes
    Buccafurri, E.
    Medjandi, A.
    Calmon, F.
    Clerc, R.
    Pala, M.
    Poncet, A.
    Ghibaudo, G.
    2009 PROCEEDINGS OF ESSCIRC, 2009, : 221 - +
  • [35] rf-electrometer using a carbon nanotube resonant tunneling transistor
    Lechner, Lorenz G.
    Wu, Fan
    Danneau, Romain
    Andresen, Soren E.
    Hakonen, Pertti
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (08)
  • [36] RF performance and modeling of Si/SiGe resonant interband tunneling diodes
    Jin, N
    Chung, SY
    Yu, RH
    Di Giacomo, SJ
    Berger, PR
    Thompson, PE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2129 - 2135
  • [37] TRANSPORT IN TRANSVERSE MAGNETIC-FIELDS IN RESONANT TUNNELING STRUCTURES
    ZASLAVSKY, A
    LI, YP
    TSUI, DC
    SANTOS, M
    SHAYEGAN, M
    PHYSICAL REVIEW B, 1990, 42 (02): : 1374 - 1380
  • [38] Resonant tunneling through a quantum dot in the presence of alternating fields
    Liu, LJ
    Lin, TH
    COMMUNICATIONS IN THEORETICAL PHYSICS, 1997, 27 (04) : 407 - 412
  • [39] NUCLEAR PARAMAGNETIC RELAXATION WITH OFF-RESONANT RF FIELDS
    WALGRAEF, D
    PHYSICA, 1973, 63 (03): : 527 - 539
  • [40] Cellular neural/nonlinear networks using Resonant Tunneling Diode
    Li, SR
    Mazumder, P
    Chua, LO
    2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY, 2004, : 164 - 167