TRANSPORT IN TRANSVERSE MAGNETIC-FIELDS IN RESONANT TUNNELING STRUCTURES

被引:36
|
作者
ZASLAVSKY, A
LI, YP
TSUI, DC
SANTOS, M
SHAYEGAN, M
机构
[1] Department of Electrical Engineering, Princeton University
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 02期
关键词
D O I
10.1103/PhysRevB.42.1374
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report measurements on the magnetotunneling characteristics of a high-quality bistable double-barrier resonant tunneling device in magnetic fields transverse to the tunneling direction. The transverse magnetic field B causes complex, nonmonotonic shifts in the position of the resonant current peak in the I(V) curve. The resonant peak is also strongly broadened by B, and the peak current is suppressed. The intrinsic bistability of the device is quenched for B>5 T. We explain these effects by invoking the magnetic-field-induced change in transverse momentum k as electrons tunnel into the well. The change k alters both the tunneling supply function and the tunneling probability for a given alignment of the resonant subband and the emitter electrode. Self-consistent calculations based on this model reproduce the complex behavior of resonant peak position and explain the experimentally observed magnetic-field effects. © 1990 The American Physical Society.
引用
收藏
页码:1374 / 1380
页数:7
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