The Study of Dark Currents in HgCdTe Heterostructure Photodiodes

被引：0
|
作者：
N. I. Iakovleva
机构：
[1] JSC Scientific and Production Association Orion,
来源：
Journal of Communications Technology and Electronics | 2021年 / 66卷
关键词：
heterostructure; HgCdTe; mercury–cadmium telluride; MCT; photodiode; dark current; MBE; LPE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：368 / 374
页数：6
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