Characterization of Zn1−xMgxO Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors

被引：0

作者：

Chien-Yie Tsay

Min-Chi Wang

Shin-Chuan Chiang

机构：

[1] Feng Chia University,Department of Materials Science and Engineering

[2] Research Alliance,undefined

[3] Taiwan TFT LCD Association (TTLA),undefined

来源：

Journal of Electronic Materials | 2009年 / 38卷

关键词：

Transparent oxide semiconductors; Zn; Mg; O; sol–gel process; thin-film transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Transparent semiconductor thin films of Zn1−xMgxO (0 ≤ x ≤ 0.36) were prepared using a sol–gel process; the crystallinity levels, microstructures, and optical properties affected by Mg content were studied. The experimental results showed that addition of Mg species in ZnO films markedly decreased the surface roughness and improved transparency in the visible range. A Zn1−xMgxO film with an x-value of 0.2 exhibited the best average transmittance, namely 93.7%, and a root-mean-square (RMS) roughness of 1.63 nm. Therefore, thin-film transistors (TFTs) with a Zn0.8Mg0.2O active channel layer were fabricated and found to have n-type enhancement mode. The Zn0.8Mg0.2O TFT had a field-effect mobility of 0.1 cm2/V s, threshold voltage of 6.0 V, and drain current on/off ratio of more than 107.

引用

页码：1962 / 1968

页数：6

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