Photoinduced trap generation at the Si-SiO2 interface

被引：0

作者：

M. Cernusca

R. Heer

G.A. Reider

机构：

[1] Technische Universität Wien,

[2] Abteilung Quantenelektronik und Lasertechnik,undefined

[3] Gusshausstr. 27/359-4,undefined

[4] A-1040 Vienna,undefined

[5] Austria (Fax: 43-1/504-2477,undefined

[6] E-mail: reider@ps1.iaee.tuwien.ac.at),undefined

来源：

Applied Physics B | 1998年 / 66卷

关键词：

PACS: 78.66.-w; 79.20.-m; 42.65.-k;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

interface upon irradiation of oxidized Si(100) and Si(111) samples with femtosecond laser pulses of nanojoule pulse energy at the wavelength of 780 nm (1.6 eV). We attribute this effect to a dc-field-induced SH contribution which results from the creation of new oxide traps by a photoinduced damage process. The damage process occurs, with a significantly lower efficiency, also under cw irradiation; the experimental results, however, rule out a thermal origin of the effect as well as a multiphoton effect.

引用

页码：367 / 370

页数：3

共 50 条

[1] Photoinduced trap generation at the Si-SiO2 interface
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[3] CHEMISTRY OF SI-SIO2 INTERFACE TRAP ANNEALING
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