INTERFACE-TRAP GENERATION INDUCED BY HOT-HOLE INJECTION AT THE SI-SIO2 INTERFACE

The individual role of hot holes, hot electrons, and their recombination in interface-trap generation at the Si-SiO2 interface during hot-carrier injection has been investigated with an emphasis on its oxide thickness dependence (7-30 nm). Hot holes are found to be able to generate interface traps and to be much more effective for interface-trap generation at low-level injections than both hot electrons and electron-hole recombination. The experimental evidence of no thickness dependence of the hot-hole-induced interface-trap generation suggests that this is an interfacial process occurring at the Si-SiO2 interface.