Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

被引：0
|
作者：
M. K. Bakhadyrkhanov
Z. T. Kenzhaev
S. V. Koveshnikov
A. A. Usmonov
G. Kh. Mavlonov
机构：
[1] Tashkent State Technical University,
[2] Karakalpakian State University,undefined
来源：
Inorganic Materials | 2022年 / 58卷
关键词：
phosphorus; boron; diffusion; mobility; quasi-neutral complexes;
D O I：
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学科分类号：
摘要：
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页码：1 / 6
页数：5
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