Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode

被引：0

作者：

Wen F. ^{[1
]}

Huang L. ^{[1
]}

Tong L. ^{[1
]}

Huang D. ^{[1
]}

Liu D. ^{[1
]}

机构：

[1] Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan

来源：

Frontiers of Optoelectronics in China | 2009年 / 2卷 / 4期

基金：

中国国家自然科学基金;

关键词：

dual-wavelength; luminescence; metal-organic chemical vapor deposition (MOCVD); multi-quantum well (MQW);

D O I：

10.1007/s12200-009-0070-4

中图分类号：

学科分类号：

摘要：

Blue and green dual wavelength InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) has wide applications in full color display, monolithic white LED and solid state lighting, etc. Blue and green dual wavelength LEDs, which consist of InGaN strain-reduction layer, green InGaN/GaN MQWand blue InGaN/GaN MQW, were grown by metal-organic chemical vapor deposition (MOCVD), and the luminescence properties of dual wavelength LEDs with different well arrangements were studied by photoluminescence and electroluminescence. The experimental results indicated that well position played an important role on the luminescence evolvement from photoluminescence to electroluminescence. © 2009 Higher Education Press and Springer Berlin Heidelberg.

引用

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页码：446 / 449

页数：3

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