Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers

被引：14
|
作者：
Choi, YS
Park, JH
Kim, SS
Song, HJ
Lee, SH
Jung, JJ
Lee, BT [1 ]
机构：
[1] Chonnam Natl Univ, Photon & Elect Thin Film Lab, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[2] Chonnam Natl Univ, Dept Dent Mat, Kwangju 500757, South Korea
[3] LG Innotek, Components Div, Kwangju 506731, South Korea
来源：
MATERIALS LETTERS | 2004年 / 58卷 / 21期
关键词：
GaN; dislocations; PL; CL;
D O I：
10.1016/j.matlet.2004.03.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence (PL) and cathodoluminescence (CL) of light emitting diode samples with various InGaN/GaN multi-quantum-well (MQW) active structures and a range of dislocation density (similar to 7 x 10(8)/cm(2) to similar to 9 x 10(9)/cm(2)) were investigated. Results indicate that threading dislocations have impact on the luminescence of GaN thin films and act as a nonradiative recombination center. It was also observed that the optical emission is affected by MQW structure such as the number of quantum wells. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：2614 / 2617
页数：4
相关论文
共 50 条
  • [1] Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure
    Ishikawa, H
    Nakada, N
    Morn, M
    Zhao, GY
    Egawa, T
    Jimbo, T
    Umeno, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (11A): : L1170 - L1172
  • [2] Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
    Sheu, JK
    Chi, GC
    Su, YK
    Liu, CC
    Chang, CM
    Hung, WC
    Jou, MJ
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (06) : 1055 - 1058
  • [3] Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
    McBride, Patrick M.
    Yan, Qimin
    Van de Walle, Chris G.
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (08)
  • [4] Characteristics of InGaN/GaN multi-quantum-well light-emitting diodes with various growth temperatures of p-GaN layers
    Kim, CS
    Youn, HS
    Choi, RJ
    Bae, SJ
    Cho, HK
    Lee, BK
    Kang, DS
    Suh, EK
    Hahn, YB
    Lee, HJ
    Hong, CH
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S431 - S433
  • [5] Color-Tunable 3D InGaN/GaN Multi-Quantum-Well Light-Emitting-Diode Based on Microfacet Emission and Programmable Driving Power Supply
    Wang, Lai
    Wang, Xun
    Bertram, Frank
    Sheng, Bowen
    Hao, Zhibiao
    Luo, Yi
    Sun, Changzheng
    Xiong, Bing
    Han, Yanjun
    Wang, Jian
    Li, Hongtao
    Schmidt, Gordon
    Veit, Peter
    Christen, Jurgen
    Wang, Xinqiang
    [J]. ADVANCED OPTICAL MATERIALS, 2021, 9 (01)
  • [6] Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode
    Casu, Claudia
    Buffolo, Matteo
    Caria, Alessandro
    De Santi, Carlo
    Zanoni, Enrico
    Meneghesso, Gaudenzio
    Meneghini, Matteo
    [J]. MICROMACHINES, 2022, 13 (08)
  • [7] Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode
    Feng WEN
    Lirong HUANG
    Liangzhu TONG
    Dexiu HUANG
    Deming LIU
    [J]. Frontiers of Optoelectronics in China, 2009, 2 (04) : 446 - 449
  • [8] Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode
    Wen F.
    Huang L.
    Tong L.
    Huang D.
    Liu D.
    [J]. Frontiers of Optoelectronics in China, 2009, 2 (4): : 446 - 449
  • [9] Thermal Effects in a Bendable InGaN/GaN Quantum-Well Light-Emitting Diode
    Chen, Horng-Shyang
    Lin, Chun-Han
    Shih, Pei-Ying
    Hsieh, Chieh
    Su, Chia-Ying
    Wu, Yuh-Renn
    Kiang, Yean-Woei
    Yang, Chih-Chung
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 26 (14) : 1442 - 1445
  • [10] InGaN/GaN multi-quantum-well planar metal-semiconductor-metal light-emitting diodes
    Miao, C.
    Lu, H.
    Du, X. Z.
    Li, Y.
    Zhang, R.
    Zheng, Y. D.
    [J]. ELECTRONICS LETTERS, 2008, 44 (06) : 441 - 443
12345