Effect of the low-temperature (20-60°C) heating of silicon on its microhardness

被引：0

作者：

Tetelbaum D.I. ^{[1
]}

Kuril'chik E.V. ^{[1
]}

Pokhil G.P. ^{[2
]}

Kuzmina Pyatkina A.A. ^{[3
]}

机构：

[1] Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod

[2] Skobel'tsyn Institute of Nuclear Physics, Moscow State University, Moscow

[3] OAO KB Ikar, Nizhni Novgorod

来源：

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2013年 / 7卷 / 6期

关键词：

Defect System; Surface Investigation; Neutron Technique; Long Range Effect; Synchrotron Neutron Tech;

D O I：

10.1134/S1027451013060219

中图分类号：

学科分类号：

摘要：

Changes in the microhardness of silicon samples exposed to temperatures of 20-60°C are studied. It is found that the microhardness increases; this effect is preserved at room temperature for 20 min and non-monotonically depends on the temperature and exposure time (the changes are maximal at ∼40°C and ∼100 s, respectively). The microhardness of samples with native oxide removed does not change. The results are discussed in terms of a model of processes in the silicon-oxide system, which was previously proposed for the case of irradiation of silicon with light. The practical importance of the effect is discussed. © 2013 Pleiades Publishing, Ltd.

引用

页码：1110 / 1113

页数：3

共 50 条

[21] LOW-TEMPERATURE SILICON BOLOMETERS
PANKRATOV, NA
KULIKOV, YV
SHCHETININA, NV
SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1978, 45 (07): : 435 - 437
[22] LOW-TEMPERATURE REACTORS FOR SPACE HEATING
LERNER, EJ
IEEE SPECTRUM, 1984, 21 (02) : 50 - 55
[23] LOW-TEMPERATURE CONVECTORS FOR SPACE HEATING
ANGELINO, G
PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART A-JOURNAL OF POWER AND ENERGY, 1990, 204 (01) : 15 - 22
[24] HEATING OF AIR FOR LOW-TEMPERATURE DRYING
KLEBER, H
ZUCKERINDUSTRIE, 1985, 110 (08): : 686 - 688
[25] Wall heating effect on crystallization of low-temperature deposited silicon films from an inductively-coupled plasma
Kojima, T
Ohishi, A
Toyoda, H
Goto, M
Nishitani, M
Sugai, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (01): : 322 - 325
[26] Effect of electroactive nickel on the low-temperature annealing behavior of silicon
E. A. Jafarova
E. S. Taptygov
Z. A. Iskenderzade
Inorganic Materials, 2010, 46 : 1045 - 1048
[27] THE EFFECT OF PREPARATION CONDITIONS ON THE MORPHOLOGY OF LOW-TEMPERATURE SILICON FILMS
KRUZELECKY, RV
RACANSKY, D
ZUKOTYNSKI, S
KOO, YC
PERZ, JM
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 104 (2-3) : 237 - 248
[28] Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures
B. N. Romanyuk
V. P. Melnik
V. G. Popov
I. M. Khatsevich
A. S. Oberemok
Semiconductors, 2010, 44 : 514 - 518
[29] Effect of Electroactive Nickel on the Low-Temperature Annealing Behavior of Silicon
Jafarova, E. A.
Taptygov, E. S.
Iskenderzade, Z. A.
INORGANIC MATERIALS, 2010, 46 (10) : 1045 - 1048
[30] Effect of hydrogen implantation on low-temperature activation of boron in silicon
Lin, Jui-Chang
Lee, Bo-Wen
Chang, Ruey-Dar
Chu, Che-Men
Woon, Wei-Yen
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 505 : 58 - 63

← 1 2 3 4 5 →