Effect of electroactive nickel on the low-temperature annealing behavior of silicon

被引：0
|
作者：
E. A. Jafarova
E. S. Taptygov
Z. A. Iskenderzade
机构：
[1] Academy of Sciences of Azerbaijan,Institute of Physics
[2] Azerbaijani Technical University,undefined
来源：
Inorganic Materials | 2010年 / 46卷
关键词：
Capture Cross Section; Deep Level Transient Spectroscopy; Nickel Atom; Deep Center; Boric Acid Solution;
D O I：
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学科分类号：
摘要：
We have studied the effect of low-temperature annealing on the behavior of electroactive nickel in silicon. The results demonstrate that the state of electroactive nickel centers in silicon is stable up to 200°C. Starting at 300°C, the SiNi solid solution decomposes and the electroactive nickel concentration decreases. From low-temperature (t > 200°C) annealing kinetics, the activation energy for the annealing of a deep center at Ec − 0.41 eV is estimated at 1.2–1.5 eV. The decomposition rate of the SiNi solid solution increases with temperature.
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页码：1045 / 1048
页数：3
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