Effect of electroactive nickel on the low-temperature annealing behavior of silicon

We have studied the effect of low-temperature annealing on the behavior of electroactive nickel in silicon. The results demonstrate that the state of electroactive nickel centers in silicon is stable up to 200°C. Starting at 300°C, the SiNi solid solution decomposes and the electroactive nickel concentration decreases. From low-temperature (t > 200°C) annealing kinetics, the activation energy for the annealing of a deep center at Ec − 0.41 eV is estimated at 1.2–1.5 eV. The decomposition rate of the SiNi solid solution increases with temperature.