Photoluminescence Measurement of Er,O-Codoped GaAs Under a Pulsed Magnetic Field up to 60 T

被引：0
|
作者：
H. Ohta
O. Portugall
N. Ubrig
M. Fujisawa
H. Katsuno
E. Fatma
S. Okubo
Y. Fujiwara
机构：
[1] Kobe University,Molecular Photoscience Research Center
[2] Kobe University,Division of Frontier Research and Technology
[3] Kobe University,Graduate School of Science
[4] Laboratoire National des Champs Magnétiques Pulsés (LNCMP),Graduate School of Engineering
[5] Osaka University,undefined
来源：
Journal of Low Temperature Physics | 2010年 / 159卷
关键词：
Photoluminescence; Magnetic semiconductors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have performed photoluminescence (PL) measurements on magnetic semiconductor GaAs:Er,O under pulsed magnetic fields up to 60 T at 4.2 K. We have succeeded in observing the Zeeman effect of the 4I13/2→4I15/2 PL transition of the Er3+ in the high magnetic field region. The effective g-factor of the dominant PL transition is estimated to be geff=1.54±0.04. This value is in reasonable agreement with the theoretical value based on the crystal field theory.
引用
收藏
页码：203 / 207
页数：4
相关论文
共 50 条
  • [31] Absorption induced photoluminescence intensity modulation of Er3+:YVO4 single crystal under pulsed high magnetic field
    Zhang, Junpei
    Ma, Zongwei
    Han, Junbo
    Du, Guihuan
    Zhou, Yulan
    Li, Liang
    Cheng, Ze
    JOURNAL OF LUMINESCENCE, 2013, 144 : 53 - 56
  • [32] Shubnikov-de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T
    Yip, King Yau
    Wang, Lingfei
    Poon, Tsz Fung
    Yu, Kai Ham
    Lam, Siu Tung
    Lai, Kwing To
    Singleton, John
    Balakirev, Fedor F.
    Goh, Swee K.
    APL MATERIALS, 2024, 12 (02)
  • [33] Development of magnetization measurement under high pressure and pulsed high magnetic field
    Endo, S
    Yamada, J
    Imada, S
    Ishizuka, M
    Kindo, K
    Miyamoto, S
    Ono, F
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (05): : 2445 - 2447
  • [34] Magneto-Transport Setup and Pulsed Magnetic Field Device up to 5.5 T
    Lahcen Essaleh
    Instruments and Experimental Techniques, 2021, 64 : 321 - 326
  • [35] Magneto-Transport Setup and Pulsed Magnetic Field Device up to 5.5 T
    Essaleh, Lahcen
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2021, 64 (02) : 321 - 326
  • [36] Magnetoresistance saturation in Si MOSFETs in a parallel pulsed magnetic field up to 40 T
    Broto, JM
    Goiran, M
    Rakoto, H
    Gold, A
    Dolgopolov, VT
    PHYSICAL REVIEW B, 2003, 67 (16):
  • [37] Anomalous brightening of photoluminescence spatial-pattern in n-GaAs Corbino disks under a pulsed electric field
    Aoki, K
    SOLID STATE COMMUNICATIONS, 2000, 117 (01) : 21 - 25
  • [38] 60 T pulsed magnetic field in Bitter magnet made of tungsten and coiled by liquid helium
    Bednarek, Stanislaw
    PRZEGLAD ELEKTROTECHNICZNY, 2024, 100 (03): : 244 - 248
  • [39] Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP light-emitting diodes grown by low-pressure organometallic vapor phase epitaxy
    Koizumi, A
    Fujiwara, Y
    Inoue, K
    Urakami, A
    Yoshikane, T
    Takeda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 2223 - 2225
  • [40] MEASUREMENTS OF HALL LOOP OF GdCo AND GdFe AMORPHOUS FILMS WITH PERPENDICULAR MAGNETIC ANISOTROPY UNDER PULSED HIGH MAGNETIC FIELD UP TO 40 T.
    Okamoto, K.
    Osada, T.
    Miura, N.
    Togami, Y.
    1600, (TJMJ-1):
12345