Photoluminescence Measurement of Er,O-Codoped GaAs Under a Pulsed Magnetic Field up to 60 T

被引：0
|
作者：
H. Ohta
O. Portugall
N. Ubrig
M. Fujisawa
H. Katsuno
E. Fatma
S. Okubo
Y. Fujiwara
机构：
[1] Kobe University,Molecular Photoscience Research Center
[2] Kobe University,Division of Frontier Research and Technology
[3] Kobe University,Graduate School of Science
[4] Laboratoire National des Champs Magnétiques Pulsés (LNCMP),Graduate School of Engineering
[5] Osaka University,undefined
来源：
Journal of Low Temperature Physics | 2010年 / 159卷
关键词：
Photoluminescence; Magnetic semiconductors;
D O I：
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中图分类号：
学科分类号：
摘要：
We have performed photoluminescence (PL) measurements on magnetic semiconductor GaAs:Er,O under pulsed magnetic fields up to 60 T at 4.2 K. We have succeeded in observing the Zeeman effect of the 4I13/2→4I15/2 PL transition of the Er3+ in the high magnetic field region. The effective g-factor of the dominant PL transition is estimated to be geff=1.54±0.04. This value is in reasonable agreement with the theoretical value based on the crystal field theory.
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页码：203 / 207
页数：4
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