Modelling and Experiment of a Silicon Resonant Pressure Sensor

被引：0
|
作者：
Zheng Cui
Deyong Chen
Shanhong Xia
机构：
[1] Rutherford Appleton Laboratory,The State Key Laboratory of Transducer Technology, Institute of Electronics
[2] Chinese Academy of Sciences,undefined
来源：
Analog Integrated Circuits and Signal Processing | 2002年 / 32卷
关键词：
MEMS design; silicon resonator; pressure sensor; computer simulation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Modelling of a silicon resonator as a pressure sensor is presented. The resonator is electrothermally excited and the resonance frequency shift is detected by a piezoresistive thin film detector. Computer simulation using the commercial MEMS software tool IntelliSuite™ is compared with analytical model. Various design aspects, such as the pressure sensitivity, electrothermal heating of vibrating beam, influence of detection current and damping effect are investigated. Silicon resonator sensors have been fabricated and measured. The characteristics predicted by computer simulation has been confirmed by experimental results.
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收藏
页码：29 / 35
页数：6
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