3-DIMENSIONAL MICROMACHINING OF SILICON PRESSURE SENSOR INTEGRATING RESONANT STRAIN-GAUGE ON DIAPHRAGM

被引：47
|
作者：
IKEDA, K
KUWAYAMA, H
KOBAYASHI, T
WATANABE, T
NISHIKAWA, T
YOSHIDA, T
HARADA, K
机构：
[1] Corporate R, D Department 3, Yokogawa Electric Corporation, Musashino-shi, Tokyo, 180
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期
关键词：
D O I：
10.1016/0924-4247(90)87078-W
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method of fabricating a novel pressure sensor is presented. The sensor has resonant strain gauges built into micro vacuum cavities on the surface of the diaphragm. The resonant strain gauge has a resonator the natural frequency of which is modulated by the strain in the diaphragm surface. The resonator and the vacuum cavity of the strain gauge are fabricated by a self-aligning selective epitaxial method and a hybrid selective etching method; a unique vacuum-sealing technique is used to make the vacuum cavity. © 1990.
引用
收藏
页码：1007 / 1010
页数：4
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