Structural analysis of PLD grown 3C-SiC thin films on Si

被引：3
|
作者：
Gusev A.S. [1 ]
Ryndya S.M. [2 ]
Kargin N.I. [1 ]
Averyanov D.V. [3 ]
Pavlova E.P. [1 ]
机构：
[1] National Research Nuclear University MEPhI, Moscow
[2] Karpov Institute of Physical Chemistry, Moscow
[3] National Research Centre “Kurchatov Institute,”, Moscow
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2014年 / 8卷 / 6期
关键词：
Root Mean Square; Select Area Electron Diffraction; High Resolution Transmission Electron Microscopy; Surface Investigation; Neutron Technique;
D O I：
10.1134/S1027451014060287
中图分类号：
学科分类号：
摘要：
Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods. © 2014, Pleiades Publishing, Ltd.
引用
收藏
页码：1221 / 1229
页数：8
相关论文
共 50 条
  • [1] Crystallinity of 3C-SiC films grown on Si substrates
    Yagi, K.
    Nagasawa, H.
    Materials Science Forum, 1998, 264-268 (pt 1): : 191 - 194
  • [2] Stresses in 3C-SiC films grown on Si substrates
    Jacob, Chacko
    Pirouz, Pirouz
    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 1999, : 275 - 278
  • [3] Crystallinity of 3C-SiC films grown on Si substrates
    Yagi, K
    Nagasawa, H
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 191 - 194
  • [4] Stress control in 3C-SiC films grown on Si(111)
    Zgheib, C
    Masri, P
    Weih, P
    Ambacher, O
    Pezoldt, J
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 301 - 304
  • [5] Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates
    Myers, RL
    Hobart, KD
    Twigg, M
    Rao, S
    Fatemi, M
    Kub, FJ
    Saddow, SE
    SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 2004, 815 : 145 - 148
  • [6] Spectroscopic ellipsometry of 3C-SiC thin films grown on Si substrates using organosilane sources
    Kubo, N
    Moritani, A
    Kitahara, K
    Asahina, S
    Kanayama, N
    Tsutsumi, K
    Suzuki, M
    Nishino, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 4015 - 4018
  • [7] Characterization of 3C-SiC thin films grown on Si surfaces patterned with various periods and depths
    S. -Y. Hwang
    J. -H. Park
    H. J. Song
    S. J. Jang
    Su Hwan Oh
    Moon Ho Park
    J. -H. Kim
    B. -T. Lee
    Journal of Electronic Materials, 2004, 33 : L11 - L14
  • [8] Characteristics of polycrystalline 3C-SiC thin films grown on Si wafers for harsh environment microdevices
    Chung, Gwiy-Sang
    Kim, Kang-San
    Han, Ki-Bong
    CERAMICS INTERNATIONAL, 2008, 34 (04) : 841 - 844
  • [9] Characterization of 3C-SiC thin films grown on Si surfaces patterned with various periods and depths
    Hwang, SY
    Park, JH
    Song, HJ
    Jang, SJ
    Oh, SH
    Park, MH
    Kim, JH
    Lee, BT
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : L11 - L14
  • [10] Epitaxial graphene formation on 3C-SiC/Si thin films
    Suemitsu, Maki
    Jiao, Sai
    Fukidome, Hirokazu
    Tateno, Yasunori
    Makabe, Isao
    Nakabayashi, Takashi
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (09)
12345